| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Vgs(th) (Max) @ Id: | - |
| Vgs (Max): | - |
| Technology: | SiC (Silicon Carbide Junction Transistor) |
| Supplier Device Package: | TO-247AB |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 50 mOhm @ 20A |
| Power Dissipation (Max): | 282W (Tc) |
| Packaging: | Tube |
| Package / Case: | TO-247-3 |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 18 Weeks |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 3091pF @ 800V |
| FET Type: | - |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Drain to Source Voltage (Vdss): | 1200V |
| Detailed Description: | 1200V 45A (Tc) 282W (Tc) Through Hole TO-247AB |
| Current - Continuous Drain (Id) @ 25°C: | 45A (Tc) |
| Email: | [email protected] |
