FQI4N20LTU
FQI4N20LTU
Part Number:
FQI4N20LTU
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET N-CH 200V 3.8A I2PAK
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
58622 Pieces
Delivery Time:
1-2 days
Data sheet:
FQI4N20LTU.pdf

Introduction

FQI4N20LTU best price and fast delivery.
BOSER Technology is the distributor for FQI4N20LTU, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for FQI4N20LTU by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:2V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:I2PAK (TO-262)
Series:QFET®
Rds On (Max) @ Id, Vgs:1.35 Ohm @ 1.9A, 10V
Power Dissipation (Max):3.13W (Ta), 45W (Tc)
Packaging:Tube
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:310pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:5.2nC @ 5V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Drain to Source Voltage (Vdss):200V
Detailed Description:N-Channel 200V 3.8A (Tc) 3.13W (Ta), 45W (Tc) Through Hole I2PAK (TO-262)
Current - Continuous Drain (Id) @ 25°C:3.8A (Tc)
Email:[email protected]

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