FQH8N100C
FQH8N100C
Part Number:
FQH8N100C
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET N-CH 1000V 8A TO-247
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
48337 Pieces
Delivery Time:
1-2 days
Data sheet:
FQH8N100C.pdf

Introduction

FQH8N100C best price and fast delivery.
BOSER Technology is the distributor for FQH8N100C, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for FQH8N100C by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-247
Series:QFET®
Rds On (Max) @ Id, Vgs:1.45 Ohm @ 4A, 10V
Power Dissipation (Max):225W (Tc)
Packaging:Tube
Package / Case:TO-247-3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:3220pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:70nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):1000V
Detailed Description:N-Channel 1000V 8A (Tc) 225W (Tc) Through Hole TO-247
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Email:[email protected]

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