FQD6N60CTM-WS
Part Number:
FQD6N60CTM-WS
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET N-CH 600V DPAK
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
38948 Pieces
Delivery Time:
1-2 days
Data sheet:
FQD6N60CTM-WS.pdf

Introduction

FQD6N60CTM-WS best price and fast delivery.
BOSER Technology is the distributor for FQD6N60CTM-WS, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for FQD6N60CTM-WS by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D-Pak
Series:QFET®
Rds On (Max) @ Id, Vgs:2 Ohm @ 2A, 10V
Power Dissipation (Max):80W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names:FQD6N60CTM_WS
FQD6N60CTM_WS-ND
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:810pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:20nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600V
Detailed Description:N-Channel 600V 4A (Tc) 80W (Tc) Surface Mount D-Pak
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Email:[email protected]

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