FQD10N20LTM
FQD10N20LTM
Part Number:
FQD10N20LTM
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET N-CH 200V 7.6A DPAK
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
48165 Pieces
Delivery Time:
1-2 days
Data sheet:
1.FQD10N20LTM.pdf2.FQD10N20LTM.pdf

Introduction

FQD10N20LTM best price and fast delivery.
BOSER Technology is the distributor for FQD10N20LTM, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for FQD10N20LTM by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:2V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-252, (D-Pak)
Series:QFET®
Rds On (Max) @ Id, Vgs:360 mOhm @ 3.8A, 10V
Power Dissipation (Max):2.5W (Ta), 51W (Tc)
Packaging:Original-Reel®
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names:FQD10N20LTMDKR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:8 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:830pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:17nC @ 5V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Drain to Source Voltage (Vdss):200V
Detailed Description:N-Channel 200V 7.6A (Tc) 2.5W (Ta), 51W (Tc) Surface Mount TO-252, (D-Pak)
Current - Continuous Drain (Id) @ 25°C:7.6A (Tc)
Email:[email protected]

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