FQA13N80-F109
FQA13N80-F109
Part Number:
FQA13N80-F109
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET N-CH 800V 12.6A TO-3P
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
52986 Pieces
Delivery Time:
1-2 days
Data sheet:
FQA13N80-F109.pdf

Introduction

FQA13N80-F109 best price and fast delivery.
BOSER Technology is the distributor for FQA13N80-F109, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for FQA13N80-F109 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-3PN
Series:QFET®
Rds On (Max) @ Id, Vgs:750 mOhm @ 6.3A, 10V
Power Dissipation (Max):300W (Tc)
Packaging:Tube
Package / Case:TO-3P-3, SC-65-3
Other Names:FQA13N80_F109
FQA13N80_F109-ND
FQA13N80_F109FS
FQA13N80_F109FS-ND
FQA13N80F109
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:17 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:3500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:88nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):800V
Detailed Description:N-Channel 800V 12.6A (Tc) 300W (Tc) Through Hole TO-3PN
Current - Continuous Drain (Id) @ 25°C:12.6A (Tc)
Email:[email protected]

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