FDB10AN06A0
FDB10AN06A0
Part Number:
FDB10AN06A0
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET N-CH 60V 75A TO-263AB
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
47298 Pieces
Delivery Time:
1-2 days
Data sheet:
FDB10AN06A0.pdf

Introduction

FDB10AN06A0 best price and fast delivery.
BOSER Technology is the distributor for FDB10AN06A0, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for FDB10AN06A0 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-263AB
Series:PowerTrench®
Rds On (Max) @ Id, Vgs:10.5 mOhm @ 75A, 10V
Power Dissipation (Max):135W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1840pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:37nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Drain to Source Voltage (Vdss):60V
Detailed Description:N-Channel 60V 12A (Ta), 75A (Tc) 135W (Tc) Surface Mount TO-263AB
Current - Continuous Drain (Id) @ 25°C:12A (Ta), 75A (Tc)
Email:[email protected]

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