FDB024N08BL7
FDB024N08BL7
Part Number:
FDB024N08BL7
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET N-CH 80V 120A D2PAK7
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
80126 Pieces
Delivery Time:
1-2 days
Data sheet:
FDB024N08BL7.pdf

Introduction

FDB024N08BL7 best price and fast delivery.
BOSER Technology is the distributor for FDB024N08BL7, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for FDB024N08BL7 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:4.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D²PAK (TO-263)
Series:PowerTrench®
Rds On (Max) @ Id, Vgs:2.4 mOhm @ 100A, 10V
Power Dissipation (Max):246W (Tc)
Packaging:Cut Tape (CT)
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
Other Names:FDB024N08BL7CT
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:40 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:13530pF @ 40V
Gate Charge (Qg) (Max) @ Vgs:178nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):80V
Detailed Description:N-Channel 80V 120A (Tc) 246W (Tc) Surface Mount D²PAK (TO-263)
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Email:[email protected]

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