FCP20N60_G
Part Number:
FCP20N60_G
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
INTEGRATED CIRCUIT
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
88610 Pieces
Delivery Time:
1-2 days
Data sheet:
FCP20N60_G.pdf

Introduction

FCP20N60_G best price and fast delivery.
BOSER Technology is the distributor for FCP20N60_G, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for FCP20N60_G by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220-3
Series:SuperFET™
Rds On (Max) @ Id, Vgs:190 mOhm @ 10A, 10V
Power Dissipation (Max):208W (Tc)
Packaging:Tube
Package / Case:TO-220-3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:3080pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:98nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600V
Detailed Description:N-Channel 600V 20A (Tc) 208W (Tc) Through Hole TO-220-3
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Email:[email protected]

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