FCP099N65S3
Part Number:
FCP099N65S3
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET N-CH 650V 30A TO220-3
Quantity:
53093 Pieces
Delivery Time:
1-2 days
Data sheet:
FCP099N65S3.pdf

Introduction

FCP099N65S3 best price and fast delivery.
BOSER Technology is the distributor for FCP099N65S3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for FCP099N65S3 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:4.5V @ 3mA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220-3
Series:SuperFET® III
Rds On (Max) @ Id, Vgs:99 mOhm @ 15A, 10V
Power Dissipation (Max):227W (Tc)
Package / Case:TO-220-3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:2480pF @ 400V
Gate Charge (Qg) (Max) @ Vgs:61nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):650V
Detailed Description:N-Channel 650V 30A (Tc) 227W (Tc) Through Hole TO-220-3
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Email:[email protected]

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