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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Modules > DF200R12W1H3B27BOMA1
DF200R12W1H3B27BOMA1
Part Number:
DF200R12W1H3B27BOMA1
Manufacturer:
International Rectifier (Infineon Technologies)
Description:
IGBT MODULE VCES 1200V 200A
Quantity:
55244 Pieces
Delivery Time:
1-2 days
Data sheet:
DF200R12W1H3B27BOMA1.pdf
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Introduction

DF200R12W1H3B27BOMA1 best price and fast delivery.
BOSER Technology is the distributor for DF200R12W1H3B27BOMA1, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for DF200R12W1H3B27BOMA1 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Collector Emitter Breakdown (Max):1200V
Vce(on) (Max) @ Vge, Ic:1.3V @ 15V, 30A
Supplier Device Package:Module
Series:-
Power - Max:375W
Package / Case:Module
Other Names:DF200R12W1H3_B27
DF200R12W1H3_B27-ND
SP001056182
Operating Temperature:-40°C ~ 150°C
NTC Thermistor:Yes
Mounting Type:Chassis Mount
Input Capacitance (Cies) @ Vce:2nF @ 25V
Input:Standard
IGBT Type:-
Detailed Description:IGBT Module 2 Independent 1200V 30A 375W Chassis Mount Module
Current - Collector Cutoff (Max):1mA
Current - Collector (Ic) (Max):30A
Configuration:2 Independent
Email:[email protected]

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