| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Vgs(th) (Max) @ Id: | 3.5V @ 5mA |
| Vgs (Max): | +15V, -4V |
| Technology: | SiC (Silicon Carbide Junction Transistor) |
| Supplier Device Package: | TO-263-7 |
| Series: | C3M™ |
| Rds On (Max) @ Id, Vgs: | 78 mOhm @ 20A, 15V |
| Power Dissipation (Max): | 113.5W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds: | 660pF @ 600V |
| Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 15V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 15V |
| Drain to Source Voltage (Vdss): | 1000V |
| Detailed Description: | N-Channel 1000V 35A (Tc) 113.5W (Tc) Surface Mount TO-263-7 |
| Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
| Email: | [email protected] |
