| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | PG-SOT223-4 |
| Series: | SIPMOS® |
| Rds On (Max) @ Id, Vgs: | 4 Ohm @ 400mA, 10V |
| Power Dissipation (Max): | 1.8W (Ta) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | TO-261-4, TO-261AA |
| Other Names: | BSP299H6327XUSA1-ND BSP299H6327XUSA1TR SP001058628 |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 3 (168 Hours) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 400pF @ 25V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 500V |
| Detailed Description: | N-Channel 500V 400mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4 |
| Current - Continuous Drain (Id) @ 25°C: | 400mA (Ta) |
| Email: | [email protected] |
