APTM100H45FT3G
Part Number:
APTM100H45FT3G
Manufacturer:
Microsemi
Description:
MOSFET 4N-CH 1000V 18A SP3
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
75270 Pieces
Delivery Time:
1-2 days
Data sheet:
1.APTM100H45FT3G.pdf2.APTM100H45FT3G.pdf

Introduction

APTM100H45FT3G best price and fast delivery.
BOSER Technology is the distributor for APTM100H45FT3G, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for APTM100H45FT3G by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:5V @ 2.5mA
Supplier Device Package:SP3
Series:-
Rds On (Max) @ Id, Vgs:540 mOhm @ 9A, 10V
Power - Max:357W
Packaging:Bulk
Package / Case:SP3
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:32 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:4350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:154nC @ 10V
FET Type:4 N-Channel (H-Bridge)
FET Feature:Standard
Drain to Source Voltage (Vdss):1000V (1kV)
Detailed Description:Mosfet Array 4 N-Channel (H-Bridge) 1000V (1kV) 18A 357W Chassis Mount SP3
Current - Continuous Drain (Id) @ 25°C:18A
Email:[email protected]

Quick Request Quote

Part Number
Quantity
Company
E-mail
Phone
Comments