APTM100DA18T1G
Part Number:
APTM100DA18T1G
Manufacturer:
Microsemi
Description:
MOSFET N-CH 1000V 40A SP1
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
49663 Pieces
Delivery Time:
1-2 days
Data sheet:
1.APTM100DA18T1G.pdf2.APTM100DA18T1G.pdf

Introduction

APTM100DA18T1G best price and fast delivery.
BOSER Technology is the distributor for APTM100DA18T1G, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for APTM100DA18T1G by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:5V @ 2.5mA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SP1
Series:-
Rds On (Max) @ Id, Vgs:216 mOhm @ 33A, 10V
Power Dissipation (Max):657W (Tc)
Packaging:Bulk
Package / Case:SP1
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:14800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:570nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):1000V
Detailed Description:N-Channel 1000V 40A (Tc) 657W (Tc) Chassis Mount SP1
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Email:[email protected]

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