| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Vce Saturation (Max) @ Ib, Ic: | 700mV @ 1mA, 10mA |
| Transistor Type: | NPN |
| Supplier Device Package: | TO-92-3 |
| Series: | - |
| Power - Max: | 625mW |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Other Names: | 2N5210TFR-ND 2N5210TFRTR |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 2 Weeks |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Frequency - Transition: | 30MHz |
| Detailed Description: | Bipolar (BJT) Transistor NPN 50V 100mA 30MHz 625mW Through Hole TO-92-3 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 100µA, 5V |
| Current - Collector Cutoff (Max): | 50nA (ICBO) |
| Current - Collector (Ic) (Max): | 100mA |
| Base Part Number: | 2N5210 |
| Email: | [email protected] |
