2N2907AE4
Part Number:
2N2907AE4
Manufacturer:
Microsemi
Description:
DIE TRANS PNP MED PWR GEN PURP T
[LeadFreeStatus]未找到翻译
RoHS Compliant
Quantity:
30334 Pieces
Delivery Time:
1-2 days
Data sheet:
2N2907AE4.pdf

Introduction

2N2907AE4 best price and fast delivery.
BOSER Technology is the distributor for 2N2907AE4, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for 2N2907AE4 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Collector Emitter Breakdown (Max):60V
Vce Saturation (Max) @ Ib, Ic:1.6V @ 50mA, 500mA
Transistor Type:PNP
Supplier Device Package:TO-18
Series:-
RoHS Status:RoHS Compliant
Power - Max:500mW
Package / Case:TO-206AA, TO-18-3 Metal Can
Operating Temperature:-65°C ~ 200°C (TJ)
Mounting Type:Through Hole
Frequency - Transition:-
Detailed Description:Bipolar (BJT) Transistor PNP 60V 600mA 500mW Through Hole TO-18
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Current - Collector Cutoff (Max):10µA (ICBO)
Current - Collector (Ic) (Max):600mA
Email:[email protected]

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