1N8030-GA
1N8030-GA
Part Number:
1N8030-GA
Manufacturer:
GeneSiC Semiconductor
Description:
DIODE SCHOTTKY 650V 750MA TO257
[LeadFreeStatus]未找到翻译
Contains lead / RoHS non-compliant
Quantity:
73014 Pieces
Delivery Time:
1-2 days
Data sheet:
1N8030-GA.pdf

Introduction

1N8030-GA best price and fast delivery.
BOSER Technology is the distributor for 1N8030-GA, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for 1N8030-GA by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Forward (Vf) (Max) @ If:1.39V @ 750mA
Voltage - DC Reverse (Vr) (Max):650V
Supplier Device Package:TO-257
Speed:No Recovery Time > 500mA (Io)
Series:-
Reverse Recovery Time (trr):0ns
Packaging:Tube
Package / Case:TO-257-3
Other Names:1242-1117
1N8030GA
Operating Temperature - Junction:-55°C ~ 250°C
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:18 Weeks
Lead Free Status / RoHS Status:Contains lead / RoHS non-compliant
Diode Type:Silicon Carbide Schottky
Detailed Description:Diode Silicon Carbide Schottky 650V 750mA Through Hole TO-257
Current - Reverse Leakage @ Vr:5µA @ 650V
Current - Average Rectified (Io):750mA
Capacitance @ Vr, F:76pF @ 1V, 1MHz
Base Part Number:1N8030
Email:[email protected]

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