1N6622US
Part Number:
1N6622US
Manufacturer:
Microsemi
Description:
DIODE GEN PURP 660V 1.2A A-MELF
[LeadFreeStatus]未找到翻译
Contains lead / RoHS non-compliant
Quantity:
49368 Pieces
Delivery Time:
1-2 days
Data sheet:
1N6622US.pdf

Introduction

1N6622US best price and fast delivery.
BOSER Technology is the distributor for 1N6622US, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for 1N6622US by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Forward (Vf) (Max) @ If:1.4V @ 1.2A
Voltage - DC Reverse (Vr) (Max):660V
Supplier Device Package:A-MELF
Speed:Fast Recovery = 200mA (Io)
Series:-
Reverse Recovery Time (trr):30ns
Packaging:Bulk
Package / Case:SQ-MELF, A
Operating Temperature - Junction:-65°C ~ 150°C
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Contains lead / RoHS non-compliant
Diode Type:Standard
Detailed Description:Diode Standard 660V 1.2A Surface Mount A-MELF
Current - Reverse Leakage @ Vr:500nA @ 660V
Current - Average Rectified (Io):1.2A
Capacitance @ Vr, F:10pF @ 10V, 1MHz
Email:[email protected]

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