| Kondisi | New and Original |
|---|---|
| Asal | Contact us |
| Distributor | Boser Technology |
| Vgs (th) (Max) @ Id: | 2.6V @ 500µA |
| Vgs (Max): | ±18V |
| Teknologi: | GaNFET (Gallium Nitride) |
| Paket Perangkat pemasok: | TO-220AB |
| Seri: | - |
| Rds Pada (Max) @ Id, Vgs: | 180 mOhm @ 10A, 8V |
| Power Disipasi (Max): | 81W (Tc) |
| Pengemasan: | Tube |
| Paket / Case: | TO-220-3 |
| Suhu Operasional: | -55°C ~ 150°C (TJ) |
| mount Jenis: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 6 Weeks |
| Kapasitansi Masukan (Ciss) (Max) @ VDS: | 720pF @ 480V |
| Gate Charge (Qg) (Max) @ Vgs: | 6.2nC @ 4.5V |
| FET Jenis: | N-Channel |
| Fitur FET: | - |
| Drive Voltage (Max Rds On, Min RDS Aktif): | 8V |
| Tiriskan untuk Sumber Tegangan (Vdss): | 650V |
| Detil Deskripsi: | N-Channel 650V 16A (Tc) 81W (Tc) Through Hole TO-220AB |
| Current - Continuous Drain (Id) @ 25 ° C: | 16A (Tc) |
| Email: | [email protected] |
