| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 2.6V @ 500µA |
| Vgs (Max): | ±18V |
| Teknologi: | GaNFET (Gallium Nitride) |
| Leverandør Device Package: | TO-220AB |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 180 mOhm @ 10A, 8V |
| Power Dissipation (Max): | 81W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-220-3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 6 Weeks |
| Inputkapacitans (Ciss) (Max) @ Vds: | 720pF @ 480V |
| Gate Charge (Qg) (Max) @ Vgs: | 6.2nC @ 4.5V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Drevspænding (Maks. RDS On, Min Rds On): | 8V |
| Afløb til Source Voltage (VDSS): | 650V |
| Detaljeret beskrivelse: | N-Channel 650V 16A (Tc) 81W (Tc) Through Hole TO-220AB |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 16A (Tc) |
| Email: | [email protected] |
