| État | New and Original |
|---|---|
| Origine | Contact us |
| Distributeur | Boser Technology |
| Vgs (th) (Max) @ Id: | 4V @ 250µA |
| Vgs (Max): | ±20V |
| La technologie: | MOSFET (Metal Oxide) |
| Package composant fournisseur: | TO-3 |
| Séries: | - |
| Rds On (Max) @ Id, Vgs: | 65 mOhm @ 38A, 10V |
| Dissipation de puissance (max): | 4W (Ta), 150W (Tc) |
| Emballage: | Bulk |
| Package / Boîte: | TO-204AE |
| Température de fonctionnement: | -55°C ~ 150°C (TJ) |
| Type de montage: | Through Hole |
| Niveau de sensibilité à l'humidité (MSL): | 1 (Unlimited) |
| Statut sans plomb / Statut RoHS: | Contains lead / RoHS non-compliant |
| Charge de la porte (Qg) (Max) @ Vgs: | 125nC @ 10V |
| type de FET: | N-Channel |
| Fonction FET: | - |
| Tension d'entraînement (Max Rds activé, Min Rds activé): | 10V |
| Tension drain-source (Vdss): | 100V |
| Description détaillée: | N-Channel 100V 38A (Tc) 4W (Ta), 150W (Tc) Through Hole TO-3 |
| Courant - Drainage continu (Id) à 25 ° C: | 38A (Tc) |
| Email: | [email protected] |
| image | Modèle de produit | Fabricant | La description | Vue |
|---|---|---|---|---|
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2N6768 | Microsemi | MOSFET N-CH 400V TO-204AE TO-3 | Enquête |
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2N6766 | Microsemi | MOSFET N-CH 200V TO-204AE TO-3 | Enquête |
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2N6758 | Microsemi | MOSFET N-CH 200V TO-3 | Enquête |
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2N6770 | Microsemi | MOSFET N-CH 500V 12A TO-204AE | Enquête |
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2N6764T1 | Microsemi | MOSFET N-CH 100V 38A TO-204AE | Enquête |
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2N6782 | Microsemi | MOSFET N-CH 100V TO-205AF | Enquête |
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2N6729 | AMI Semiconductor / ON Semiconductor | DIE TRANS | Enquête |
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