| Bedingung | New and Original |
|---|---|
| Ursprung | Contact us |
| Verteiler | Boser Technology |
| VGS (th) (Max) @ Id: | 4V @ 250µA |
| Vgs (Max): | ±20V |
| Technologie: | MOSFET (Metal Oxide) |
| Supplier Device-Gehäuse: | TO-3 |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 65 mOhm @ 38A, 10V |
| Verlustleistung (max): | 4W (Ta), 150W (Tc) |
| Verpackung: | Bulk |
| Verpackung / Gehäuse: | TO-204AE |
| Betriebstemperatur: | -55°C ~ 150°C (TJ) |
| Befestigungsart: | Through Hole |
| Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
| Bleifreier Status / RoHS-Status: | Contains lead / RoHS non-compliant |
| Gate Charge (Qg) (Max) @ Vgs: | 125nC @ 10V |
| Typ FET: | N-Channel |
| FET-Merkmal: | - |
| Antriebsspannung (Max Rds On, Min Rds On): | 10V |
| Drain-Source-Spannung (Vdss): | 100V |
| detaillierte Beschreibung: | N-Channel 100V 38A (Tc) 4W (Ta), 150W (Tc) Through Hole TO-3 |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C: | 38A (Tc) |
| Email: | [email protected] |
| Image | Artikelnummer | Hersteller | Beschreibung | Aussicht |
|---|---|---|---|---|
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2N6784 | Microsemi | MOSFET N-CH 200V TO-205AF | Anfrage |
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2N6768 | Microsemi | MOSFET N-CH 400V TO-204AE TO-3 | Anfrage |
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2N6766 | Microsemi | MOSFET N-CH 200V TO-204AE TO-3 | Anfrage |
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2N6770 | Microsemi | MOSFET N-CH 500V 12A TO-204AE | Anfrage |
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2N6764T1 | Microsemi | MOSFET N-CH 100V 38A TO-204AE | Anfrage |
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2N6782 | Microsemi | MOSFET N-CH 100V TO-205AF | Anfrage |
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2N6729 | AMI Semiconductor / ON Semiconductor | DIE TRANS | Anfrage |
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