| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 2.5V @ 250µA |
| Vgs (Max): | +6V, -4V |
| Teknologi: | GaNFET (Gallium Nitride) |
| Leverandør Device Package: | Die |
| Serie: | eGaN® |
| Rds On (Max) @ Id, Vgs: | 530 mOhm @ 500mA, 5V |
| Power Dissipation (Max): | - |
| Emballage: | Cut Tape (CT) |
| Pakke / tilfælde: | Die |
| Andre navne: | 917-1118-1 |
| Driftstemperatur: | -40°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 12 Weeks |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 21pF @ 32.5V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Drevspænding (Maks. RDS On, Min Rds On): | 5V |
| Afløb til Source Voltage (VDSS): | 65V |
| Detaljeret beskrivelse: | N-Channel 65V 2A (Ta) Surface Mount Die |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 2A (Ta) |
| Email: | [email protected] |
