SQR50N04-3M8_GE3
Part Number:
SQR50N04-3M8_GE3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET N-CHANNEL 40V 50A DPAK
Quantity:
60337 Pieces
Delivery Time:
1-2 days
Data sheet:
SQR50N04-3M8_GE3.pdf

Introduction

SQR50N04-3M8_GE3 best price and fast delivery.
BOSER Technology is the distributor for SQR50N04-3M8_GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SQR50N04-3M8_GE3 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:3.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D-PAK (TO-252)
Series:Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:3.8 mOhm @ 20A, 10V
Power Dissipation (Max):136W (Tc)
Package / Case:TO-252-4, DPak (3 Leads + Tab)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:6700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:105nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):40V
Detailed Description:N-Channel 40V 50A (Tc) 136W (Tc) Through Hole D-PAK (TO-252)
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Email:[email protected]

Quick Request Quote

Part Number
Quantity
Company
E-mail
Phone
Comments