MT47H64M8JN-25E:G
MT47H64M8JN-25E:G
Part Number:
MT47H64M8JN-25E:G
Manufacturer:
Micron Technology
Description:
IC DRAM 512M PARALLEL 60FBGA
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
60365 Pieces
Delivery Time:
1-2 days
Data sheet:
MT47H64M8JN-25E:G.pdf

Introduction

MT47H64M8JN-25E:G best price and fast delivery.
BOSER Technology is the distributor for MT47H64M8JN-25E:G, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for MT47H64M8JN-25E:G by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Write Cycle Time - Word, Page:15ns
Voltage - Supply:1.7 V ~ 1.9 V
Technology:SDRAM - DDR2
Supplier Device Package:60-FBGA (8x10)
Series:-
Packaging:Bulk
Package / Case:60-TFBGA
Operating Temperature:0°C ~ 85°C (TC)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):3 (168 Hours)
Memory Type:Volatile
Memory Size:512Mb (64M x 8)
Memory Interface:Parallel
Memory Format:DRAM
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 400MHz 400ps 60-FBGA (8x10)
Clock Frequency:400MHz
Base Part Number:MT47H64M8
Access Time:400ps
Email:[email protected]

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