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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > JAN2N3439L
JAN2N3439L
JAN2N3439L
Part Number:
JAN2N3439L
Manufacturer:
Microsemi
Description:
TRANS NPN 350V 1A
[LeadFreeStatus]未找到翻译
Contains lead / RoHS non-compliant
Quantity:
46160 Pieces
Delivery Time:
1-2 days
Data sheet:
JAN2N3439L.pdf
Inquiry

Introduction

JAN2N3439L best price and fast delivery.
BOSER Technology is the distributor for JAN2N3439L, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for JAN2N3439L by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Collector Emitter Breakdown (Max):350V
Vce Saturation (Max) @ Ib, Ic:500mV @ 4mA, 50mA
Transistor Type:NPN
Supplier Device Package:TO-5
Series:Military, MIL-PRF-19500/368
Power - Max:800mW
Packaging:Bulk
Package / Case:TO-205AA, TO-5-3 Metal Can
Other Names:1086-2344
1086-2344-MIL
Operating Temperature:-65°C ~ 200°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Contains lead / RoHS non-compliant
Frequency - Transition:-
Detailed Description:Bipolar (BJT) Transistor NPN 350V 1A 800mW Through Hole TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 20mA, 10V
Current - Collector Cutoff (Max):2µA
Current - Collector (Ic) (Max):1A
Email:[email protected]

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