FCP165N65S3
Part Number:
FCP165N65S3
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
SF3 650V 165MOHM E TO220
Quantity:
42157 Pieces
Delivery Time:
1-2 days
Data sheet:
FCP165N65S3.pdf

Introduction

FCP165N65S3 best price and fast delivery.
BOSER Technology is the distributor for FCP165N65S3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for FCP165N65S3 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:4.5V @ 1.9mA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220-3
Series:SuperFET® III
Rds On (Max) @ Id, Vgs:165 mOhm @ 9.5A, 10V
Power Dissipation (Max):154W (Tc)
Package / Case:TO-220-3
Other Names:FCP165N65S3-ND
FCP165N65S3OS
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):Not Applicable
Lead Free Status:Lead free
Input Capacitance (Ciss) (Max) @ Vds:1500pF @ 400V
Gate Charge (Qg) (Max) @ Vgs:39nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):650V
Detailed Description:N-Channel 650V 19A (Tc) 154W (Tc) Through Hole TO-220-3
Current - Continuous Drain (Id) @ 25°C:19A (Tc)
Email:[email protected]

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