| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Vgs(th) (Max) @ Id: | 2.5V @ 11mA |
| Vgs (Max): | +6V, -4V |
| Technology: | GaNFET (Gallium Nitride) |
| Supplier Device Package: | Die |
| Series: | eGaN® |
| Rds On (Max) @ Id, Vgs: | 4 mOhm @ 30A, 5V |
| Power Dissipation (Max): | - |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | Die |
| Other Names: | 917-EPC2032ENGRTR |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 1530pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 5V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 5V |
| Drain to Source Voltage (Vdss): | 100V |
| Detailed Description: | N-Channel 100V 48A (Ta) Surface Mount Die |
| Current - Continuous Drain (Id) @ 25°C: | 48A (Ta) |
| Email: | [email protected] |
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