APT45GP120B2DQ2G
APT45GP120B2DQ2G
Part Number:
APT45GP120B2DQ2G
Manufacturer:
Microsemi
Description:
IGBT 1200V 113A 625W TMAX
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
57315 Pieces
Delivery Time:
1-2 days
Data sheet:
APT45GP120B2DQ2G.pdf

Introduction

APT45GP120B2DQ2G best price and fast delivery.
BOSER Technology is the distributor for APT45GP120B2DQ2G, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for APT45GP120B2DQ2G by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Collector Emitter Breakdown (Max):1200V
Vce(on) (Max) @ Vge, Ic:3.9V @ 15V, 45A
Test Condition:600V, 45A, 5 Ohm, 15V
Td (on/off) @ 25°C:18ns/100ns
Switching Energy:900µJ (on), 905µJ (off)
Series:POWER MOS 7®
Power - Max:625W
Packaging:Tube
Package / Case:TO-247-3 Variant
Other Names:APT45GP120B2DQ2GMI
APT45GP120B2DQ2GMI-ND
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:32 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Type:Standard
IGBT Type:PT
Gate Charge:185nC
Detailed Description:IGBT PT 1200V 113A 625W Through Hole
Current - Collector Pulsed (Icm):170A
Current - Collector (Ic) (Max):113A
Email:[email protected]

Quick Request Quote

Part Number
Quantity
Company
E-mail
Phone
Comments