| Condición | New and Original |
|---|---|
| Origen | Contact us |
| Distribuidor | Boser Technology |
| Tensión - directo (Vf) (Max) Si @: | 875mV @ 1A |
| Voltaje - Inverso (Vr) (máx): | 150V |
| Paquete del dispositivo: | A-PAK |
| Velocidad: | Fast Recovery = 200mA (Io) |
| Serie: | - |
| Tiempo de recuperación inversa (trr): | 25ns |
| embalaje: | Tape & Reel (TR) |
| Paquete / Cubierta: | A, Axial |
| Otros nombres: | 1N5806 1N5806E3 1N5806E3TR 1N5806E3TR-ND 1N5806TR-ND 1N5806TRTR |
| Temperatura de funcionamiento - Junction: | -65°C ~ 175°C |
| Tipo de montaje: | Through Hole |
| Nivel de sensibilidad a la humedad (MSL): | 1 (Unlimited) |
| Estado sin plomo / Estado RoHS: | Lead free / RoHS Compliant |
| Tipo de diodo: | Standard |
| Descripción detallada: | Diode Standard 150V 2.5A Through Hole A-PAK |
| Corriente - Fuga inversa a Vr: | 1µA @ 150V |
| Corriente - rectificada media (Io): | 2.5A |
| Capacitancia Vr, F: | - |
| Número de pieza base: | 1N5806 |
| Email: | [email protected] |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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1N5807US | Microsemi | DIODE GEN PURP 50V 3A B-MELF | Investigación |
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1N5809 | Semtech | DIODE GEN PURP 100V 6A AXIAL | Investigación |
|
1N5807 | Semtech | DIODE GEN PURP 50V 6A AXIAL | Investigación |
|
1N5809US | Semtech | DIODE GEN PURP 100V 6A | Investigación |
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1N5802 | Microsemi | DIODE GEN PURP 50V 1A AXIAL | Investigación |
|
1N5804 | Semtech | DIODE GEN PURP 100V 3.3A AXIAL | Investigación |
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1N5807US | Semtech | DIODE GEN PURP 50V 6A | Investigación |
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1N5804US | Microsemi | DIODE GEN PURP 100V 1A D5A | Investigación |
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1N5806C.TR | Semtech | DIODE GEN PURP 150V 2.5A AXIAL | Investigación |
|
1N5803 | Microsemi | DIODE GEN PURP 75V 1A AXIAL | Investigación |
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1N5802US | Semtech | DIODE GEN PURP 50V 1.1A | Investigación |
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1N5802US | Microsemi | DIODE GEN PURP 50V 1A D5A | Investigación |
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1N5804US | Semtech | DIODE GEN PURP 100V 1.1A | Investigación |
|
1N5806US | Semtech | DIODE GEN PURP 150V 1.1A | Investigación |
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1N5806US | Microsemi | DIODE GEN PURP 150V 1A D5A | Investigación |
|
1N5805 | Microsemi | DIODE GEN PURP 125V 1A AXIAL | Investigación |
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1N5808 | Microsemi | DIODE RECT ULT FAST REC B-PKG | Investigación |
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1N5809 | Microsemi | DIODE GEN PURP 100V 3A AXIAL | Investigación |
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1N5807 | Microsemi | DIODE GEN PURP 50V 3A AXIAL | Investigación |
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1N5804 | Microsemi | DIODE GEN PURP 100V 1A AXIAL | Investigación |