TRS6E65C,S1AQ
TRS6E65C,S1AQ
Part Number:
TRS6E65C,S1AQ
Manufacturer:
Toshiba Semiconductor and Storage
Description:
DIODE SCHOTTKY 650V 6A TO220-2L
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
60267 Pieces
Delivery Time:
1-2 days
Data sheet:
TRS6E65C,S1AQ.pdf

Introduction

TRS6E65C,S1AQ best price and fast delivery.
BOSER Technology is the distributor for TRS6E65C,S1AQ, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for TRS6E65C,S1AQ by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Peak Reverse (Max):Silicon Carbide Schottky
Voltage - Forward (Vf) (Max) @ If:6A (DC)
Voltage - Breakdown:TO-220-2L
Series:-
RoHS Status:Tube
Reverse Recovery Time (trr):No Recovery Time > 500mA (Io)
Resistance @ If, F:35pF @ 650V, 1MHz
Polarization:TO-220-2
Other Names:TRS6E65C,S1AQ(S
TRS6E65C,S1Q
TRS6E65C,S1Q(S
TRS6E65CS1AQ
TRS6E65CS1AQ(S
TRS6E65CS1Q
TRS6E65CS1Q-ND
Operating Temperature - Junction:0ns
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:12 Weeks
Manufacturer Part Number:TRS6E65C,S1AQ
Expanded Description:Diode Silicon Carbide Schottky 650V 6A (DC) Through Hole TO-220-2L
Diode Configuration:90µA @ 650V
Description:DIODE SCHOTTKY 650V 6A TO220-2L
Current - Reverse Leakage @ Vr:1.7V @ 6A
Current - Average Rectified (Io) (per Diode):650V
Capacitance @ Vr, F:175°C (Max)
Email:[email protected]

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