TPCF8B01(TE85L,F,M
TPCF8B01(TE85L,F,M
Part Number:
TPCF8B01(TE85L,F,M
Manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET P-CH 20V 2.7A VS-8
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
84582 Pieces
Delivery Time:
1-2 days
Data sheet:
1.TPCF8B01(TE85L,F,M.pdf2.TPCF8B01(TE85L,F,M.pdf

Introduction

TPCF8B01(TE85L,F,M best price and fast delivery.
BOSER Technology is the distributor for TPCF8B01(TE85L,F,M, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for TPCF8B01(TE85L,F,M by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:1.2V @ 200µA
Vgs (Max):±8V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:VS-8 (2.9x1.5)
Series:U-MOSIII
Rds On (Max) @ Id, Vgs:110 mOhm @ 1.4A, 4.5V
Power Dissipation (Max):330mW (Ta)
Packaging:Tape & Reel (TR)
Package / Case:8-SMD, Flat Lead
Other Names:TPCF8B01(TE85L,F)
TPCF8B01(TE85L,F)-ND
TPCF8B01(TE85L,F,M-ND
TPCF8B01(TE85LFMTR
TPCF8B01FTR
TPCF8B01FTR-ND
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:470pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:6nC @ 5V
FET Type:P-Channel
FET Feature:Schottky Diode (Isolated)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Drain to Source Voltage (Vdss):20V
Detailed Description:P-Channel 20V 2.7A (Ta) 330mW (Ta) Surface Mount VS-8 (2.9x1.5)
Current - Continuous Drain (Id) @ 25°C:2.7A (Ta)
Email:[email protected]

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