SIHP30N60E-GE3
SIHP30N60E-GE3
Part Number:
SIHP30N60E-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N-CH 600V 29A TO220AB
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
86790 Pieces
Delivery Time:
1-2 days
Data sheet:
SIHP30N60E-GE3.pdf

Introduction

SIHP30N60E-GE3 best price and fast delivery.
BOSER Technology is the distributor for SIHP30N60E-GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SIHP30N60E-GE3 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Test:2600pF @ 100V
Vgs(th) (Max) @ Id:125 mOhm @ 15A, 10V
Technology:MOSFET (Metal Oxide)
Series:E
RoHS Status:Digi-Reel®
Rds On (Max) @ Id, Vgs:29A (Tc)
Polarization:TO-220-3
Other Names:SIHP30N60E-GE3DKR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:21 Weeks
Manufacturer Part Number:SIHP30N60E-GE3
Input Capacitance (Ciss) (Max) @ Vds:130nC @ 10V
IGBT Type:±30V
Gate Charge (Qg) (Max) @ Vgs:4V @ 250µA
FET Feature:N-Channel
Expanded Description:N-Channel 600V 29A (Tc) 250W (Tc) Through Hole
Drain to Source Voltage (Vdss):-
Description:MOSFET N-CH 600V 29A TO220AB
Current - Continuous Drain (Id) @ 25°C:600V
Capacitance Ratio:250W (Tc)
Email:[email protected]

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