| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Voltage - Test: | 325pF @ 100V |
| Voltage - Breakdown: | TO-252AA |
| Vgs(th) (Max) @ Id: | 1.5 Ohm @ 2.5A, 10V |
| Technology: | MOSFET (Metal Oxide) |
| Series: | - |
| RoHS Status: | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs: | 5.3A (Tc) |
| Polarization: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Other Names: | SIHD5N50D-GE3TR SIHD5N50DGE3 |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Part Number: | SIHD5N50D-GE3 |
| Input Capacitance (Ciss) (Max) @ Vds: | 20nC @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 5V @ 250µA |
| FET Feature: | N-Channel |
| Expanded Description: | N-Channel 500V 5.3A (Tc) 104W (Tc) Surface Mount TO-252AA |
| Drain to Source Voltage (Vdss): | - |
| Description: | MOSFET N-CH 500V 5.3A TO252 DPK |
| Current - Continuous Drain (Id) @ 25°C: | 500V |
| Capacitance Ratio: | 104W (Tc) |
| Email: | [email protected] |
