R6020ENZ1C9
R6020ENZ1C9
Part Number:
R6020ENZ1C9
Manufacturer:
LAPIS Semiconductor
Description:
MOSFET N-CH 600V 20A TO247
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
84063 Pieces
Delivery Time:
1-2 days
Data sheet:
R6020ENZ1C9.pdf

Introduction

R6020ENZ1C9 best price and fast delivery.
BOSER Technology is the distributor for R6020ENZ1C9, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for R6020ENZ1C9 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Test:1400pF @ 25V
Voltage - Breakdown:TO-247
Vgs(th) (Max) @ Id:196 mOhm @ 9.5A, 10V
Vgs (Max):10V
Technology:MOSFET (Metal Oxide)
Series:-
RoHS Status:Tube
Rds On (Max) @ Id, Vgs:20A (Tc)
Polarization:TO-247-3
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:17 Weeks
Manufacturer Part Number:R6020ENZ1C9
Input Capacitance (Ciss) (Max) @ Vds:60nC @ 10V
IGBT Type:±20V
Gate Charge (Qg) (Max) @ Vgs:4V @ 1mA
FET Feature:N-Channel
Expanded Description:N-Channel 600V 20A (Tc) 120W (Tc) Through Hole TO-247
Drain to Source Voltage (Vdss):-
Description:MOSFET N-CH 600V 20A TO247
Current - Continuous Drain (Id) @ 25°C:600V
Capacitance Ratio:120W (Tc)
Email:[email protected]

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