NTB35N15T4G
NTB35N15T4G
Part Number:
NTB35N15T4G
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET N-CH 150V 37A D2PAK
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
49978 Pieces
Delivery Time:
1-2 days
Data sheet:
NTB35N15T4G.pdf

Introduction

NTB35N15T4G best price and fast delivery.
BOSER Technology is the distributor for NTB35N15T4G, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for NTB35N15T4G by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Test:3200pF @ 25V
Voltage - Breakdown:D2PAK
Vgs(th) (Max) @ Id:50 mOhm @ 18.5A, 10V
Vgs (Max):10V
Technology:MOSFET (Metal Oxide)
Series:-
RoHS Status:Tape & Reel (TR)
Rds On (Max) @ Id, Vgs:37A (Ta)
Polarization:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names:NTB35N15T4GOS
NTB35N15T4GOS-ND
NTB35N15T4GOSTR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:25 Weeks
Manufacturer Part Number:NTB35N15T4G
Input Capacitance (Ciss) (Max) @ Vds:100nC @ 10V
IGBT Type:±20V
Gate Charge (Qg) (Max) @ Vgs:4V @ 250µA
FET Feature:N-Channel
Expanded Description:N-Channel 150V 37A (Ta) 2W (Ta), 178W (Tj) Surface Mount D2PAK
Drain to Source Voltage (Vdss):-
Description:MOSFET N-CH 150V 37A D2PAK
Current - Continuous Drain (Id) @ 25°C:150V
Capacitance Ratio:2W (Ta), 178W (Tj)
Email:[email protected]

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