| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Voltage - Test: | 1167pF @ 25V |
| Voltage - Breakdown: | U-DFN2020-6 (Type E) |
| Vgs(th) (Max) @ Id: | 160 mOhm @ 5A, 10V |
| Vgs (Max): | 4.5V, 10V |
| Technology: | MOSFET (Metal Oxide) |
| Series: | - |
| RoHS Status: | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs: | 2.9A (Ta) |
| Polarization: | 6-UDFN Exposed Pad |
| Other Names: | DMN10H170SFDE-7DITR |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 16 Weeks |
| Manufacturer Part Number: | DMN10H170SFDE-7 |
| Input Capacitance (Ciss) (Max) @ Vds: | 9.7nC @ 10V |
| IGBT Type: | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 3V @ 250µA |
| FET Feature: | N-Channel |
| Expanded Description: | N-Channel 100V 2.9A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type E) |
| Drain to Source Voltage (Vdss): | - |
| Description: | MOSFET N-CH 100V 2.9A 6UDFN |
| Current - Continuous Drain (Id) @ 25°C: | 100V |
| Capacitance Ratio: | 660mW (Ta) |
| Email: | [email protected] |
