2SK3564(STA4,Q,M)
2SK3564(STA4,Q,M)
Part Number:
2SK3564(STA4,Q,M)
Manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N-CH 900V 3A TO-220SIS
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
84709 Pieces
Delivery Time:
1-2 days
Data sheet:
1.2SK3564(STA4,Q,M).pdf2.2SK3564(STA4,Q,M).pdf

Introduction

2SK3564(STA4,Q,M) best price and fast delivery.
BOSER Technology is the distributor for 2SK3564(STA4,Q,M), we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for 2SK3564(STA4,Q,M) by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Test:700pF @ 25V
Voltage - Breakdown:TO-220SIS
Vgs(th) (Max) @ Id:4.3 Ohm @ 1.5A, 10V
Vgs (Max):10V
Technology:MOSFET (Metal Oxide)
Series:π-MOSIV
RoHS Status:Tube
Rds On (Max) @ Id, Vgs:3A (Ta)
Polarization:TO-220-3 Full Pack
Other Names:2SK3564(Q)
2SK3564(STA4,Q)
2SK3564(STA4Q)
2SK3564(STA4Q)-ND
2SK3564(STA4QM)
2SK3564Q
2SK3564Q-ND
2SK3564STA4QM
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Part Number:2SK3564(STA4,Q,M)
Input Capacitance (Ciss) (Max) @ Vds:17nC @ 10V
IGBT Type:±30V
Gate Charge (Qg) (Max) @ Vgs:4V @ 1mA
FET Feature:N-Channel
Expanded Description:N-Channel 900V 3A (Ta) 40W (Tc) Through Hole TO-220SIS
Drain to Source Voltage (Vdss):-
Description:MOSFET N-CH 900V 3A TO-220SIS
Current - Continuous Drain (Id) @ 25°C:900V
Capacitance Ratio:40W (Tc)
Email:[email protected]

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