| Kondisyon | New and Original |
|---|---|
| Pinanggalingan | Contact us |
| Distributor | Boser Technology |
| Boltahe - Test: | 55pF @ 50V |
| Boltahe - Breakdown: | Die |
| Vgs (th) (Max) @ Id: | 160 mOhm @ 500mA, 5V |
| teknolohiya: | GaNFET (Gallium Nitride) |
| serye: | eGaN® |
| RoHS Status: | Tray |
| Rds On (Max) @ Id, Vgs: | 2.7A (Ta) |
| polariseysyon: | - |
| Ibang pangalan: | 917-EPC8010ENGR EPC8010ENGJ |
| operating Temperature: | -40°C ~ 150°C (TJ) |
| Salalayan Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Bilang Bahagi: | EPC8010ENGR |
| Input Kapasidad (Ciss) (Max) @ Vds: | 0.48nC @ 5V |
| Gate Charge (Qg) (Max) @ Vgs: | 2.5V @ 250µA |
| FET Tampok: | N-Channel |
| Ang pinalawak Paglalarawan: | N-Channel 100V 2.7A (Ta) Surface Mount Die |
| Alisan ng tubig sa Source Boltahe (Vdss): | - |
| paglalarawan: | TRANS GAN 100V 2.7A BUMPED DIE |
| Current - Ang patuloy Drain (Id) @ 25 ° C: | 100V |
| kapasidad Ratio: | - |
| Email: | [email protected] |
