| Kondisi | New and Original |
|---|---|
| Asal | Contact us |
| Distributor | Boser Technology |
| Vgs (th) (Max) @ Id: | 2.5V @ 250µA |
| Vgs (Max): | +6V, -4V |
| Teknologi: | GaNFET (Gallium Nitride) |
| Paket Perangkat pemasok: | Die |
| Seri: | eGaN® |
| Rds Pada (Max) @ Id, Vgs: | 130 mOhm @ 500mA, 5V |
| Power Disipasi (Max): | - |
| Pengemasan: | Cut Tape (CT) |
| Paket / Case: | Die |
| Nama lain: | 917-1078-1 |
| Suhu Operasional: | -40°C ~ 150°C (TJ) |
| mount Jenis: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 12 Weeks |
| Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
| Kapasitansi Masukan (Ciss) (Max) @ VDS: | 52pF @ 32.5V |
| Gate Charge (Qg) (Max) @ Vgs: | 0.45nC @ 5V |
| FET Jenis: | N-Channel |
| Fitur FET: | - |
| Drive Voltage (Max Rds On, Min RDS Aktif): | 5V |
| Tiriskan untuk Sumber Tegangan (Vdss): | 65V |
| Detil Deskripsi: | N-Channel 65V 2.7A (Ta) Surface Mount Die |
| Current - Continuous Drain (Id) @ 25 ° C: | 2.7A (Ta) |
| Email: | [email protected] |
