| Kondisi | New and Original |
|---|---|
| Asal | Contact us |
| Distributor | Boser Technology |
| Tegangan - Uji: | 950pF @ 50V |
| Tegangan - Breakdown: | Die |
| Vgs (th) (Max) @ Id: | 7 mOhm @ 25A, 5V |
| Vgs (Max): | 5V |
| Teknologi: | GaNFET (Gallium Nitride) |
| Seri: | eGaN® |
| Status RoHS: | Tape & Reel (TR) |
| Rds Pada (Max) @ Id, Vgs: | 25A (Ta) |
| Polarisasi: | Die |
| Nama lain: | 917-1035-2 |
| Suhu Operasional: | -40°C ~ 125°C (TJ) |
| mount Jenis: | Surface Mount |
| Tingkat Sensitivitas Kelembaban (MSL): | 1 (Unlimited) |
| Nomor Bagian Produsen: | EPC2801 |
| Kapasitansi Masukan (Ciss) (Max) @ VDS: | 10nC @ 5V |
| IGBT Jenis: | +6V, -5V |
| Gate Charge (Qg) (Max) @ Vgs: | 2.5V @ 5mA |
| Fitur FET: | N-Channel |
| Deskripsi yang Diperluas: | N-Channel 100V 25A (Ta) Surface Mount Die |
| Tiriskan untuk Sumber Tegangan (Vdss): | - |
| Deskripsi: | TRANS GAN 100V 25A BUMPED DIE |
| Current - Continuous Drain (Id) @ 25 ° C: | 100V |
| kapasitansi Ratio: | - |
| Email: | [email protected] |
