| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 2.5V @ 600µA |
| Vgs (Max): | +5.75V, -4V |
| Teknologi: | GaNFET (Gallium Nitride) |
| Leverandør Device Package: | Die |
| Serie: | Automotive, AEC-Q101, eGaN® |
| Rds On (Max) @ Id, Vgs: | 80 mOhm @ 1A, 5V |
| Power Dissipation (Max): | - |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | Die |
| Andre navne: | 917-1200-2 |
| Driftstemperatur: | -40°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 14 Weeks |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 88pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs: | 0.83nC @ 5V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Drevspænding (Maks. RDS On, Min Rds On): | 5V |
| Afløb til Source Voltage (VDSS): | 80V |
| Detaljeret beskrivelse: | N-Channel 80V 1.7A Surface Mount Die |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 1.7A |
| Email: | [email protected] |
