| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Voltage - Test: | 580pF @ 20V |
| Voltage - Breakdown: | 8-SO |
| Vgs(th) (Max) @ Id: | 20 mOhm @ 10A, 10V |
| Series: | TrenchFET® |
| RoHS Status: | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs: | 9.2A |
| Power - Max: | 3.1W |
| Polarization: | 8-SOIC (0.154", 3.90mm Width) |
| Other Names: | SI4288DY-T1-GE3TR |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 24 Weeks |
| Manufacturer Part Number: | SI4288DY-T1-GE3 |
| Input Capacitance (Ciss) (Max) @ Vds: | 15nC @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 2.5V @ 250µA |
| FET Feature: | 2 N-Channel (Dual) |
| Expanded Description: | Mosfet Array 2 N-Channel (Dual) 40V 9.2A 3.1W Surface Mount 8-SO |
| Drain to Source Voltage (Vdss): | Logic Level Gate |
| Description: | MOSFET 2N-CH 40V 9.2A 8SO |
| Current - Continuous Drain (Id) @ 25°C: | 40V |
| Email: | [email protected] |
