TPH4R10ANL,L1Q
Part Number:
TPH4R10ANL,L1Q
Manufacturer:
Toshiba Semiconductor and Storage
Description:
X35 PB-F POWER MOSFET TRANSISTOR
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
49193 Pieces
Delivery Time:
1-2 days
Data sheet:
TPH4R10ANL,L1Q.pdf

Introduction

TPH4R10ANL,L1Q best price and fast delivery.
BOSER Technology is the distributor for TPH4R10ANL,L1Q, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for TPH4R10ANL,L1Q by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:2.5V @ 1mA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-SOP Advance (5x5)
Series:U-MOSVIII-H
Rds On (Max) @ Id, Vgs:4.1 mOhm @ 35A, 10V
Power Dissipation (Max):2.5W (Ta), 67W (Tc)
Package / Case:8-PowerVDFN
Other Names:TPH4R10ANLL1Q
Operating Temperature:150°C
Mounting Type:Surface Mount
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:6.3nF @ 50V
Gate Charge (Qg) (Max) @ Vgs:75nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):100V
Detailed Description:N-Channel 100V 92A (Ta), 70A (Tc) 2.5W (Ta), 67W (Tc) Surface Mount 8-SOP Advance (5x5)
Current - Continuous Drain (Id) @ 25°C:92A (Ta), 70A (Tc)
Email:[email protected]

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