SIHP7N60E-GE3
SIHP7N60E-GE3
Part Number:
SIHP7N60E-GE3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET N-CH 600V 7A TO-220AB
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
43726 Pieces
Delivery Time:
1-2 days
Data sheet:
1.SIHP7N60E-GE3.pdf2.SIHP7N60E-GE3.pdf

Introduction

SIHP7N60E-GE3 best price and fast delivery.
BOSER Technology is the distributor for SIHP7N60E-GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SIHP7N60E-GE3 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220AB
Series:-
Rds On (Max) @ Id, Vgs:600 mOhm @ 3.5A, 10V
Power Dissipation (Max):78W (Tc)
Packaging:Bulk
Package / Case:TO-220-3
Other Names:SIHP7N60EGE3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:680pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:40nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600V
Detailed Description:N-Channel 600V 7A (Tc) 78W (Tc) Through Hole TO-220AB
Current - Continuous Drain (Id) @ 25°C:7A (Tc)
Email:[email protected]

Quick Request Quote

Part Number
Quantity
Company
E-mail
Phone
Comments