SI3447BDV-T1-GE3
SI3447BDV-T1-GE3
Part Number:
SI3447BDV-T1-GE3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET P-CH 12V 4.5A 6-TSOP
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
50522 Pieces
Delivery Time:
1-2 days
Data sheet:
SI3447BDV-T1-GE3.pdf

Introduction

SI3447BDV-T1-GE3 best price and fast delivery.
BOSER Technology is the distributor for SI3447BDV-T1-GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SI3447BDV-T1-GE3 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:1V @ 250µA
Vgs (Max):±8V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:6-TSOP
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:40 mOhm @ 6A, 4.5V
Power Dissipation (Max):1.1W (Ta)
Packaging:Tape & Reel (TR)
Package / Case:SOT-23-6 Thin, TSOT-23-6
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs:14nC @ 4.5V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Drain to Source Voltage (Vdss):12V
Detailed Description:P-Channel 12V 4.5A (Ta) 1.1W (Ta) Surface Mount 6-TSOP
Current - Continuous Drain (Id) @ 25°C:4.5A (Ta)
Email:[email protected]

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