SI1317DL-T1-GE3
SI1317DL-T1-GE3
Part Number:
SI1317DL-T1-GE3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET P-CH 20V 1.4A SC70
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
34527 Pieces
Delivery Time:
1-2 days
Data sheet:
SI1317DL-T1-GE3.pdf

Introduction

SI1317DL-T1-GE3 best price and fast delivery.
BOSER Technology is the distributor for SI1317DL-T1-GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SI1317DL-T1-GE3 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:800mV @ 250µA
Vgs (Max):±8V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SOT-323
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:150 mOhm @ 1.4A, 4.5V
Power Dissipation (Max):500mW (Tc)
Packaging:Cut Tape (CT)
Package / Case:SC-70, SOT-323
Other Names:SI1317DL-T1-GE3CT
Operating Temperature:-50°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:272pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:6.5nC @ 4.5V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Drain to Source Voltage (Vdss):20V
Detailed Description:P-Channel 20V 1.4A (Tc) 500mW (Tc) Surface Mount SOT-323
Current - Continuous Drain (Id) @ 25°C:1.4A (Tc)
Email:[email protected]

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