MUN2213JT1G
MUN2213JT1G
Part Number:
MUN2213JT1G
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
TRANS PREBIAS NPN 338MW SC59
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
41459 Pieces
Delivery Time:
1-2 days
Data sheet:
MUN2213JT1G.pdf

Introduction

MUN2213JT1G best price and fast delivery.
BOSER Technology is the distributor for MUN2213JT1G, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for MUN2213JT1G by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Transistor Type:NPN - Pre-Biased
Supplier Device Package:SC-59
Series:-
Resistor - Emitter Base (R2):47 kOhms
Resistor - Base (R1):47 kOhms
Power - Max:338mW
Packaging:Tape & Reel (TR)
Package / Case:TO-236-3, SC-59, SOT-23-3
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 338mW Surface Mount SC-59
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Current - Collector Cutoff (Max):500nA
Current - Collector (Ic) (Max):100mA
Base Part Number:MUN2213
Email:[email protected]

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