MB85R256GPF-G-BND-ERE1
Part Number:
MB85R256GPF-G-BND-ERE1
Manufacturer:
Fujitsu Electronics America, Inc.
Description:
IC FRAM 256K PARALLEL 28SOP
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
31576 Pieces
Delivery Time:
1-2 days
Data sheet:
MB85R256GPF-G-BND-ERE1.pdf

Introduction

MB85R256GPF-G-BND-ERE1 best price and fast delivery.
BOSER Technology is the distributor for MB85R256GPF-G-BND-ERE1, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for MB85R256GPF-G-BND-ERE1 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Write Cycle Time - Word, Page:150ns
Voltage - Supply:2.7 V ~ 3.6 V
Technology:FRAM (Ferroelectric RAM)
Series:-
Operating Temperature:-40°C ~ 85°C (TA)
Moisture Sensitivity Level (MSL):3 (168 Hours)
Memory Type:Non-Volatile
Memory Size:256Kb (32K x 8)
Memory Interface:Parallel
Memory Format:FRAM
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:FRAM (Ferroelectric RAM) Memory IC 256Kb (32K x 8) Parallel 150ns
Access Time:150ns
Email:[email protected]

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